The experimental requirements for quantitative measurement of carrier recombination at defects in semiconductors using the EBIC techniqueWILSHAW, P. R.Ultramicroscopy. 1989, Vol 31, Num 2, pp 177-182, issn 0304-3991Article

'Semi-insulating' silicon using deep level impurity doping: problems and potentialMALLIK, Kanad; FALSTER, R. J; WILSHAW, P. R et al.Semiconductor science and technology. 2003, Vol 18, Num 6, pp 517-524, issn 0268-1242, 8 p.Article

Gettering of copper to oxidation induced stacking faults in siliconDE COTEAU, M. D; WILSHAW, P. R; FALSTER, R et al.Physica status solidi. A. Applied research. 1990, Vol 117, Num 2, pp 403-408, issn 0031-8965Article

Electron beam induced current investigations of transition metal impurities at extended defects in siliconWILSHAW, P. R; FELL, T. S.Journal of the Electrochemical Society. 1995, Vol 142, Num 12, pp 4298-4304, issn 0013-4651Article

Structure and properties of dislocations in semiconductors 1989, University of Oxford, 5-8 April 1989ROBERTS, S. G; HOLT, D. B; WILSHAW, P. R et al.Conference series - Institute of physics. 1989, Num 104, issn 0305-2346, XVI-470 p. [486 p.]Conference Proceedings

High resolution deep level transient spectroscopy applied to extended defects in siliconEVANS-FREEMAN, J. H; EMIROGLU, D; VERNON-PARRY, K. D et al.Journal of physics. Condensed matter (Print). 2005, Vol 17, Num 22, pp S2219-S2227, issn 0953-8984Conference Paper

The use of numerical simulation to predict the unlocking stress of dislocations in Cz-silicon wafersGIANNATTASIO, A; SENKADER, S; AZAM, S et al.Microelectronic engineering. 2003, Vol 70, Num 1, pp 125-130, issn 0167-9317, 6 p.Article

Near-band gap luminescence at room temperature from dislocations in siliconSTOWE, D. J; GALLOWAY, S. A; SENKADER, S et al.Physica. B, Condensed matter. 2003, Vol 340-42, pp 710-713, issn 0921-4526, 4 p.Conference Paper

The effect of different transition metals on the recombination efficiency of dislocationsFELL, T. S; WILSHAW, P. R.Journal de physique IV. Colloque. 1991, Vol 1, Num 6, pp C6.211-C6.216Conference Paper

Reduced microwave attenuation in coplanar waveguides using deep level impurity compensated Czochralski-silicon substratesABUELGASIM, A; MALLIK, K; ASHBURN, P et al.Semiconductor science and technology. 2011, Vol 26, Num 7, issn 0268-1242, 072001.1-072001.4Article

Piezospectroscopic measurement of the stress field around an indentation crack tip in ruby using SEM cathodoluminescenceTODD, R. I; STOWE, D; GALLOWAY, S et al.Journal of the European Ceramic Society. 2008, Vol 28, Num 10, pp 2049-2055, issn 0955-2219, 7 p.Article

Generation of dislocation glide loops in Czochralski siliconGIANNATTASIO, A; SENKADER, S; FALSTER, R. J et al.Journal of physics. Condensed matter (Print). 2002, Vol 14, Num 48, pp 12981-12987, issn 0953-8984, 7 p.Conference Paper

A study of oxygen dislocation interactions in CZ-SiSENKADER, S; JURKSCHAT, K; WILSHAW, P. R et al.Materials science & engineering. B, Solid-state materials for advanced technology. 2000, Vol 73, Num 1-3, pp 111-115, issn 0921-5107Conference Paper

Large area gridded field emitter arrays using anodised aluminiumHOLLAND, E. R; LI, Y; ABBOTT, P et al.Displays. 2000, Vol 21, Num 2-3, pp 99-104, issn 0141-9382Conference Paper

Modelling of the field emission microtriode with emitter covered with porous siliconNICOLAESCU, D; FILIP, V; WILSHAW, P. R et al.Applied surface science. 1996, Vol 94-95, pp 79-86, issn 0169-4332Conference Paper

Emission characteristics and morphology of wet etched cathodes in p-type siliconBOSWELL, E. C; WILSHAW, P. R.Journal of vacuum science & technology. B. Microelectronics and nanometer structures. Processing, measurement and phenomena. 1993, Vol 11, Num 2, pp 412-415, issn 1071-1023Conference Paper

Nitrogen transport in float-zone and Czochralski silicon investigated by dislocation locking experimentsMURPHY, J. D; GIANNATTASIO, A; SENKADER, S et al.Physica status solidi. A. Applied research. 2005, Vol 202, Num 5, pp 926-930, issn 0031-8965, 5 p.Conference Paper

Impurity locking of dislocations in siliconGIANNATTASIO, A; MURPHY, J. D; SENKADER, S et al.Proceedings - Electrochemical Society. 2004, pp 39-54, issn 0161-6374, isbn 1-56677-418-7, 16 p.Conference Paper

Nano-porous alumina coatings for improved bone implant interfacesWALPOLE, A. R; BRIGGS, E. P; KARLSSON, M et al.Materialwissenschaft und Werkstofftechnik. 2003, Vol 34, Num 12, pp 1064-1068, issn 0933-5137, 5 p.Conference Paper

On the locking of dislocations by oxygen in siliconSENKADER, S; JURKSCHAT, K; GAMBARO, D et al.Philosophical magazine. A. Physics of condensed matter. Structure, defects and mechanical properties. 2001, Vol 81, Num 3, pp 759-775, issn 1364-2804Article

Dislocation imaging using ion beam induced chargeBREESE, M. B. H; KING, P. J. C; GRIME, G. W et al.Applied physics letters. 1993, Vol 62, Num 25, pp 3309-3311, issn 0003-6951Article

Ebic contrast of defects in semiconductorsWILSHAW, P. R; FELL, T. S; COTEAU, M. D et al.Journal de physique IV. Colloque. 1991, Vol 1, Num 6, pp C6.3-C6.14Conference Paper